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TEM evaluation of strain and stress in III?V semiconductor epitaxial structures

✍ Scribed by Rocher, A. ;Cabi�, M. ;Ponchet, A. ;Arnoult, A. ;Bedel-Pereira, E.


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
242 KB
Volume
201
Category
Article
ISSN
0031-8965

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We present a study of changes in the layer morphology of symmetrically strained (GaIn)As/ \(\mathrm{Ga}(\mathrm{PAs})\) superlattices as a function of strain and off-orientation of substrates. The samples were deposited by metal-organic vapour-phase epitaxy (MOVPE). For samples grown on exactly orie