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MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures

✍ Scribed by P.M. Petroff; S.P. DenBaars


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
527 KB
Volume
15
Category
Article
ISSN
0749-6036

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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA