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Technique used in Hall effect analysis of ion implanted Si and Ge : N. G. E. Johansson, J. W. Mayer and O. J. Marsh, Solid-St. Electron. 13 (1970), p. 317

Publisher: Elsevier Science
Year: 1970
Tongue: English
Weight: 50 KB
Volume: 9
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(70)90550-0

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