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Tamn states in internal superlattice surfaces

✍ Scribed by H.K. Sy; T.C. Chua

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
120 KB
Volume
194-196
Category
Article
ISSN
0921-4526

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✦ Synopsis

We consider a model of finite semiconductor superlattice with embedded well(s) of arbitrary width adjacent to internal potential barrier(s) of arbitrary height. Using envelope-function-approximation and solving recurrenee relations, the explicit equation giving the electronic state energies is obtained. Numerical results are shown for finite GaAs/ALxGal.xAS superlattiees with identical double embedded wells.

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