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Spin-polarized surface states in semiconductor superlattices

✍ Scribed by Jarosław Kłos

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
184 KB
Volume
3
Category
Article
ISSN
1862-6351

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✦ Synopsis

Abstract

Electronic surface states in Al~0.1~Ga~0.9~As|GaAs superlattice are calculated for a system with a ZnMnSe barrier in a surface cell. In the absence of applied magnetic field the ZnMnSe barrier has the same height as the Al~0.1~Ga~0.9~As barriers in the bulk cells. When a magnetic field is applied perpendicularly to the superlattice layers, the surface cell magnetic barrier height is found to vary with spin orientation. Hence, each spin polarization involves different conditions of surface state existence. Our computations show a split of Shockley states into two levels (corresponding to different spin polarizations) and appearance of Tamm states (with specific spin polarization), induced by sufficiently strong magnetic fields. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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✍ M. Waki; K. Watari 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 211 KB

In this work we have studied systematically the effect of fluctuations in thickness and depth of the well, as well as in the thickness of the barrier in semiconductor superlattices. Our results show that the main effect of fluctuations is to break down the whole superlattice into subsets. Localizati