Bulk and surface electronic states in semiconductor superlattices
β Scribed by P. Masri; L. Dobrzynski; B. Djafari-Rouhani; J.O.A. Idiodi
- Publisher
- Elsevier Science
- Year
- 1986
- Weight
- 48 KB
- Volume
- 166
- Category
- Article
- ISSN
- 0167-2584
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π SIMILAR VOLUMES
In this work we have studied systematically the effect of fluctuations in thickness and depth of the well, as well as in the thickness of the barrier in semiconductor superlattices. Our results show that the main effect of fluctuations is to break down the whole superlattice into subsets. Localizati
We report far infrared measurements of oblique incidence power reflectivity and attenuated total reflection (ATR) on multiply Si 5--doped GaAs samples. The reflectivity spectrum in s-polarisation probes the in-plane component of the superlattice dielectric function, and is sensitive to the overall 3
## Abstract Electronic surface states in Al~0.1~Ga~0.9~As|GaAs superlattice are calculated for a system with a ZnMnSe barrier in a surface cell. In the absence of applied magnetic field the ZnMnSe barrier has the same height as the Al~0.1~Ga~0.9~As barriers in the bulk cells. When a magnetic field