𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Bulk and surface electronic states in semiconductor superlattices

✍ Scribed by P. Masri; L. Dobrzynski; B. Djafari-Rouhani; J.O.A. Idiodi


Publisher
Elsevier Science
Year
1986
Weight
48 KB
Volume
166
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Localization of electronic states in sem
✍ M. Waki; K. Watari πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 211 KB

In this work we have studied systematically the effect of fluctuations in thickness and depth of the well, as well as in the thickness of the barrier in semiconductor superlattices. Our results show that the main effect of fluctuations is to break down the whole superlattice into subsets. Localizati

Observation of surface and bulk plasmons
✍ T. Dumelow; A.A. Hamilton; T.J. Parker; D.R. Tilley; B. Samson; S.R.P. Smith; R. πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 267 KB

We report far infrared measurements of oblique incidence power reflectivity and attenuated total reflection (ATR) on multiply Si 5--doped GaAs samples. The reflectivity spectrum in s-polarisation probes the in-plane component of the superlattice dielectric function, and is sensitive to the overall 3

Spin-polarized surface states in semicon
✍ JarosΕ‚aw KΕ‚os πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 184 KB

## Abstract Electronic surface states in Al~0.1~Ga~0.9~As|GaAs superlattice are calculated for a system with a ZnMnSe barrier in a surface cell. In the absence of applied magnetic field the ZnMnSe barrier has the same height as the Al~0.1~Ga~0.9~As barriers in the bulk cells. When a magnetic field