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Observation of surface and bulk plasmons in semiconductor superlattices

โœ Scribed by T. Dumelow; A.A. Hamilton; T.J. Parker; D.R. Tilley; B. Samson; S.R.P. Smith; R.B. Beall; J.J. Harris


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
267 KB
Volume
9
Category
Article
ISSN
0749-6036

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โœฆ Synopsis


We report far infrared measurements of oblique incidence power reflectivity and attenuated total reflection (ATR) on multiply Si 5--doped GaAs samples. The reflectivity spectrum in s-polarisation probes the in-plane component of the superlattice dielectric function, and is sensitive to the overall 3D electron density. The p-polarisation spectrum, however, also probes the out-of-plane component, resulting in an extra mode which is sensitive to the distribution of free electrons between wells and barriers. The p-polarisation ATR spectrum shows surface modes which are also sensitive to this distribution. The results are compared with a bulk slab model of the dielectric function.


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Study of bulk and surface phonons and pl
โœ T. Dumelow; A.R. El Gohary; A. Hamilton; K.A. Maslin; T.J. Parker; N. Raj; B. Sa ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 367 KB

Measurements" by Raman spectroscopy, oblique incidence far-IR power reflection spectroscopy and attenuated total reflection spectroscopy have been used to study bulk and surface phonons and plasmons in semiconductor superlattices and multiple quantum wells. Raman spectroscopy has been used to invest