We report far infrared measurements of oblique incidence power reflectivity and attenuated total reflection (ATR) on multiply Si 5--doped GaAs samples. The reflectivity spectrum in s-polarisation probes the in-plane component of the superlattice dielectric function, and is sensitive to the overall 3
Bulk and edge plasmons in multiple-striped superlattices
β Scribed by G. Gumbs; X. Zhu
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 308 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Measurements" by Raman spectroscopy, oblique incidence far-IR power reflection spectroscopy and attenuated total reflection spectroscopy have been used to study bulk and surface phonons and plasmons in semiconductor superlattices and multiple quantum wells. Raman spectroscopy has been used to invest
The collective oscillations of a 2D quantum well electron plasma embedded in a semiinfinite host plasma medium (at a distance z 0 from the surface) are analyzed here, based on an explicit inversion of the joint dielectric function of the combined system in position representation in closed form. The