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Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

✍ Scribed by Buttari, D.; Chini, A.; Meneghesso, G.; Zanoni, E.; Chavarkar, P.; Coffie, R.; Zhang, N.Q.; Heikinan, S.; Shen, L.; Xing, H.; Zheng, C.; Mishra, U.K.

Book ID: 120195177
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 174 KB
Volume: 23
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.988810

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