✦ LIBER ✦
Low Damage,>tex<$hbox Cl_2$>/tex<-Based Gate Recess Etching for 0.3->tex<$muhbox m$>/tex<Gate-Length AlGaN/GaN HEMT Fabrication
✍ Scribed by Wang, W.-K.; Li, Y.-J.; Lin, C.-K.; Chan, Y.-J.; Chen, G.-T.; Chyi, J.-I.
- Book ID
- 126501610
- Publisher
- IEEE
- Year
- 2004
- Tongue
- English
- Weight
- 158 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0741-3106
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