Synthesis of SiC by silicon and carbon combustion in air
β Scribed by Yun Yang; Zhi-Ming Lin; Jiang-Tao Li
- Book ID
- 104022943
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 488 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0955-2219
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β¦ Synopsis
Nano-sized β€-silicon carbide (β€-SiC) powder was successfully prepared using the combustion synthesis method in air in combination with a controlled pre-reaction mechanical activation treatment. For the low-exothermic reaction system Si/C, the effect of the mechanical activation time, one crucial processing variable, on the combustion behavior of Si C reactant in air was investigated, and the reaction kinetics parameters were measured and calculated to analyze the reaction mechanism of this combustion reaction. Meanwhile, the reaction mechanism was further approved by the thermodynamic calculation.
π SIMILAR VOLUMES
C, molecule deposition onto commercial SOS (silicon on sapphire) wafers with (001) silicon on r-plane (1102) sapphire results in the formation of silicon carbide (Sic), if substrate temperatures of 810Β°C are exceeded. Elastic recoil spectroscopy indicates the formation of a stoichiometric Sic layer.
A simple way of fabricating AlN-SiC solid solutions (AlN-SiCss) through the combustion reaction of aluminum, carbon and Si 3 N 4 powder mixtures in air is reported. X-ray diffraction analysis, scanning electron microscopy and energy dispersive spectroscopy are employed to analyze the phase compositi