Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD
β Scribed by B. Meester; L. Reijnen; A. Goossens; J. Schoonman
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 696 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0948-1907
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π SIMILAR VOLUMES
Bi~2~O~3~ films have been deposited on alumina particles by Fluidized Bed Chemical Vapor Deposition at atmospheric pressure, using bismuth triphenyl and oxygen as precursors. In the operating range tested, the presence of Bi on the whole particles has been evidenced by EDX, and the existence of the
Laue oscillations) appear close to the high-angle reflections. The film thickness can then be evaluated as: where W i and W i-1 are positions of adjacent satellite maxima.
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metalΒ±organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450 C to