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Synthesis and optical properties of silicon nanowires grown by different methods

✍ Scribed by A. Colli; S. Hofmann; A. Fasoli; A.C. Ferrari; C. Ducati; R.E. Dunin-Borkowski; J. Robertson


Publisher
Springer
Year
2006
Tongue
English
Weight
594 KB
Volume
85
Category
Article
ISSN
1432-0630

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Optical properties of Ge nanowires grown
✍ Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 199 KB

## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re

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## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low‐defect density Ge NW –