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Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p–i–n structures

✍ Scribed by Pasi Kostamo; Aapo Lankinen; Turkka O. Tuomi; Antti Säynätjoki; Harri Lipsanen; Yuri Zhilyaev; Leonid Fedorov; Tatiana Orlova

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
576 KB
Volume
591
Category
Article
ISSN
0168-9002

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✍ A. Lankinen; L. Knuuttila; T. Tuomi; P. Kostamo; A. Säynätjoki; J. Riikonen; H. 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 237 KB

Crystal defects of GaAs thin films deposited by metalorganic vapour phase epitaxy on high-quality Ge substrates are studied by synchrotron X-ray topography. The GaAs thin films were measured to have % 500 dislocations cm À2 , which is a similar number to what plain Ge substrates show. The dislocatio