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Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE

✍ Scribed by M. Begotti; M. Longo; R. Magnanini; L. Tarricone; E. Gombia; R. Mosca; M. Lynch; K. Barnham; M. Mazzer; G. Hill

No coin nor oath required. For personal study only.

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