We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM
✦ LIBER ✦
Synchrotron radiation studies of the growth and beam damage of tin-phthalocyanine on GaAs(0 0 1)-1 × 6 substrates
✍ Scribed by G Cabailh; J.W Wells; I.T McGovern; A.R Vearey-Roberts; A Bushell; D.A Evans
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 128 KB
- Volume
- 234
- Category
- Article
- ISSN
- 0169-4332
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