The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti
✦ LIBER ✦
Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures
✍ Scribed by E. Tournié; N. Grandjean; A. Trampert; J. Massies; K.H. Ploog
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 726 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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