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Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs

✍ Scribed by B. Lee; I. Szafranek; G. E. Stillman; K. Arai; Y. Nashimoto; K. Shimizu; N. Iwata; I. Sakuma

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
368 KB
Volume
14
Category
Article
ISSN
0142-2421

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πŸ“œ SIMILAR VOLUMES

Kinetic energy enhanced molecular beam e
Kinetic energy enhanced molecular beam epitaxial growth of Si{100}
✍ Barbara J. Garrison; Mitchel T. Miller; Donald W. Brenner πŸ“‚ Article πŸ“… 1988 πŸ› Elsevier Science 🌐 English βš– 338 KB

For kinetic energy enhanced molecular beam epitaxial growth of Si{ 100) we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These tutreconstructions occur on the femtosecond timescale rather than requiring the long times associated with su