Surface energy and relaxation effects at (111) semiconductor surfaces
β Scribed by D.W. Bullett
- Publisher
- Elsevier Science
- Year
- 1975
- Tongue
- English
- Weight
- 274 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
Electron correlation effects associated with the dangling bond surface states of Si(lll)-5x5, Si(llI)-7x7 and Sn/Ge(lll)-3 3 x are analyzed. In all the cases, extensive LDA-calculations are performed and effective two-dimensional Hamiltonians are deduced. Our analysis of these Hamiltonians shows tha
Atomic relaxations at a newly discovered step structure on H-terminated Si( 111) surfaces, miscut in the ( il2) direction and prepared by a new wet chemical technique, are quantified by first-principles calculations and infrared absorption measuremeats. A strong H-H steric interaction within this s