Step relaxation and surface stress at H-terminated vicinal Si(111)

✍ Scribed by Krishnan Raghavachari; P. Jakob; Y.J. Chabal

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 536 KB
• Volume: 206
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(93)85533-t

✦ Synopsis

Atomic relaxations at a newly discovered step structure on H-terminated Si( 111) surfaces, miscut in the ( il2) direction and prepared by a new wet chemical technique, are quantified by first-principles calculations and infrared absorption measuremeats.

A strong H-H steric interaction within this step structure produces a 20" Si-H bond rotation and a large ( z 0.15 A) displacement of the adjacent step-edge silicon atoms. The range of the perturbations, however, remains confined to s 10 A of the step edge.