Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and SnGe(111)
✍ Scribed by J. Ortega; F. Flores; R. Pérez; A.Levy Yeyati
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 588 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0079-6816
No coin nor oath required. For personal study only.
✦ Synopsis
Electron correlation effects associated with the dangling bond surface states of Si(lll)-5x5, Si(llI)-7x7 and Sn/Ge(lll)-3 3 x are analyzed. In all the cases, extensive LDA-calculations are performed and effective two-dimensional Hamiltonians are deduced. Our analysis of these Hamiltonians shows that: (a) the Si(lll)-5x5 surface states exhibits a metal-insulator transition; (b) the Si(lll)-7x7 surface shows important similarities with the Si(lll)-5x5
case, but it has a dangling bond surface band having a metallic character; (c) finally, the Sn/Ge(lll)-3x3 dangling bond surface bands also shows important correlation effects that are found, however, not to affect the metallic character of the surface bands.
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