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Photoemission study of the surface electronic structure of Si(111) 1x1 and Si(111) 7x7

✍ Scribed by H. Neddermeyer; U. Misse; P. Rupieper


Publisher
Elsevier Science
Year
1982
Weight
61 KB
Volume
117
Category
Article
ISSN
0167-2584

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Electron correlation effects at semicond
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Electron correlation effects associated with the dangling bond surface states of Si(lll)-5x5, Si(llI)-7x7 and Sn/Ge(lll)-3 3 x are analyzed. In all the cases, extensive LDA-calculations are performed and effective two-dimensional Hamiltonians are deduced. Our analysis of these Hamiltonians shows tha