Electron correlation effects at semicond
β
J. Ortega; F. Flores; R. PΓ©rez; A.Levy Yeyati
π
Article
π
1998
π
Elsevier Science
π
English
β 588 KB
Electron correlation effects associated with the dangling bond surface states of Si(lll)-5x5, Si(llI)-7x7 and Sn/Ge(lll)-3 3 x are analyzed. In all the cases, extensive LDA-calculations are performed and effective two-dimensional Hamiltonians are deduced. Our analysis of these Hamiltonians shows tha