## Abstract The nonβdestructive characterization of intrinsic stress is very important to evaluate the reliability of devices based on diamondβlike carbon (DLC) films. Whereas the only requirement for the Xβray diffraction method is a crystalline state of specimen, Raman spectroscopic stress analys
Surface Distribution of Stress State and Diamond Phases in [100] Oriented Diamond Films
β Scribed by Rossi, M. C. ;Salvatori, S. ;Galluzzi, F.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 201 KB
- Volume
- 172
- Category
- Article
- ISSN
- 0031-8965
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Several kinds of (100) surfaces of homoepitaxial diamond films doped with boron are investigated. The valence band maximum at the surface and electronic affinity are measured using ultraviolet and X-ray photoelectron spectroscopies. In p-type doped films, resistivity measurements indicate that the b
The diamond Raman lines were examined around the He' ion implantation-induced channels in chemical vapor deposited Γlms over Si substrates. Several spectra from di β erent positions around the channels, formed at di β erent target currents, were obtained using a Raman microprobe. It is concluded that