Stress distribution around the ion-induced channels in chemical vapor deposited diamond films: a micro-Raman study
✍ Scribed by P. S. Dobal; M. S. Navati; H. D. Bist; T. Som; V. N. Kulkarni
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 343 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0377-0486
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✦ Synopsis
The diamond Raman lines were examined around the He' ion implantation-induced channels in chemical vapor deposited Ðlms over Si substrates. Several spectra from di †erent positions around the channels, formed at di †erent target currents, were obtained using a Raman microprobe. It is concluded that the observed shift in the diamond Raman line arises primarily from the compressive stress. The line broadening is attributed to the decrease in phonon lifetime, which is associated with the scattering from inhomogeneous stress distribution and from defects in the exfoliated regions. The observed correlation between the stress and non-diamond content at various spots suggests that the degree of compressive stress may be associated with the density of microcrystalline defects produced by ion irradiation. The ion implantation-induced compositional transformation is also evidenced in these diamond Ðlms.