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Surface channel MESFETs on nanocrystalline diamond

✍ Scribed by Kubovic, M.; Janischowsky, K.; Kohn, E.

Book ID
122515862
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
462 KB
Volume
14
Category
Article
ISSN
0925-9635

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## Abstract Submicron gate‐length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen‐terminatedβ€”large grain polycrystalline diamond. Devices showed high drain‐source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut‐off frequency f~t~ = 10