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DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond

โœ Scribed by Calvani, P.; Corsaro, A.; Girolami, M.; Sinisi, F.; Trucchi, D.M.; Rossi, M.C.; Conte, G.; Carta, S.; Giovine, E.; Lavanga, S.; Limiti, E.; Ralchenko, V.

Book ID
121695581
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
490 KB
Volume
18
Category
Article
ISSN
0925-9635

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Microwave operation of sub-micrometer ga
Microwave operation of sub-micrometer gate surface channel MESFETs in polycrystalline diamond
โœ P. Calvani; A. Corsaro; F. Sinisi; M. C. Rossi; G. Conte; E. Giovine; W. Ciccogn ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 422 KB

## Abstract Submicron gateโ€length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogenโ€terminatedโ€”large grain polycrystalline diamond. Devices showed high drainโ€source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cutโ€off frequency f~t~ = 10