Total reΓection x-ray photoelectron spectroscopy (TRXPS) has been applied to measure contamination elements on Si wafers using an x-ray photoelectron spectrometer. The radiated x-rays are limited by a slit placed in front of the Al anode, and the grazing angle is made shallow by using a crystal to m
Surface analysis of Si/W multilayer using total reflection X-ray photoelectron spectroscopy
β Scribed by Jun Kawai; Kouichi Hayashi; Hiroyuki Amano; Hisataka Takenaka; Yoshinori Kitajima
- Book ID
- 108437195
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 494 KB
- Volume
- 88-91
- Category
- Article
- ISSN
- 0368-2048
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