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Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

✍ Scribed by Jeong, J.; Aetukuri, N.; Graf, T.; Schladt, T. D.; Samant, M. G.; Parkin, S. S. P.

Book ID
121796572
Publisher
American Association for the Advancement of Science
Year
2013
Tongue
English
Weight
987 KB
Volume
339
Category
Article
ISSN
0036-8075

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✍ A.K. Raychaudhuri; Swastik Kar; Arindam Ghosh πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 103 KB

We present results of 1=f noise measurements at low frequency (10 -3 Β‘ f Β‘ 10 Hz) and at low temperatures (1 K Β‘ T Β‘ 20 K) in single crystals of Si doped with P and B. The doping concentration n is close to the critical composition nc of the metal-insulator transition (MIT). We observed that the noi