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Raman study of electric-field-induced first-order metal-insulator transition in VO[sub 2]-based devices

✍ Scribed by Kim, Hyun-Tak; Chae, Byung-Gyu; Youn, Doo-Hyeb; Kim, Gyungock; Kang, Kwang-Yong; Lee, Seung-Joon; Kim, Kwan; Lim, Yong-Sik

Book ID: 120592853
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 757 KB
Volume: 86
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1941478

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