This work deals with the high-resolution SIMS characterization of sharp elemental distributions existing in quantum-well and superlattice structures. We have analysed III-V semiconductor multiple quantum-well and superlattice samples in order to derive useful information for the control of the growt
Superlattice and Multi-Quantum-Well Properties of MX Compounds
β Scribed by Jianhua Wei; Shijie Xie; Jongbae Hong
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 145 KB
- Volume
- 225
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We studied the development of V-shaped defects in GaInNΒ±GaN quantum well superlattices. We observed that these defects could not be suppressed by varying growth parameters like strain, In content, GaInN growth temperature etc. However, perfect superlattices without such defects could be grown by cyc
The aim of this paper is to present a model including the fundamental physical effects of the multi quantum well (MQW) ring laser for the understanding of the optical mode behaviour and the control of the oscillating mode in semiconductor injection ring laser. The fully physical model is derived fro
We present a theoretical study of the energies and localizations of bound electronic states in a finite AlAs/GaAs superlattice (SL) with an enlarged centered GaAs quantum well (EW). The calculations are performed using a semi-empirical sp 3 s \* spin dependent tight-binding model and the surface Gre