## Abstract A large‐signal equivalent‐circuit model of quantum‐well lasers is developed in this paper. This model is based on three‐level rate equations, including carrier transport effects and the role of the gateway state at the quantum well. The experiential formula of the optical peak gain vari
Accurate physical modelling of multi quantum well ring lasers
✍ Scribed by F. De Leonardis; V. M. N. Passaro
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 239 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1612-2011
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✦ Synopsis
The aim of this paper is to present a model including
the fundamental physical effects of the multi quantum well (MQW)
ring laser for the understanding of the optical mode behaviour and
the control of the oscillating mode in semiconductor injection
ring laser. The fully physical model is derived from a quantum
mechanical approach and don't depend on any semi-empirical
approximation. The ring laser behaviour is related to its physical
and technological constraints, as the backscattering effect and
ring radius.
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