Electronic States of a Superlattice with an Enlarged Quantum Well: A Tight-Binding Approach
✍ Scribed by N. Shtinkov; S.J. Vlaev; V. Donchev; K. Germanova
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 91 KB
- Volume
- 220
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
We present a theoretical study of the energies and localizations of bound electronic states in a finite AlAs/GaAs superlattice (SL) with an enlarged centered GaAs quantum well (EW). The calculations are performed using a semi-empirical sp 3 s * spin dependent tight-binding model and the surface Green function matching technique. The behavior of the bound states at the G-point of the two-dimensional Brillouin zone is studied for a wide range of EW widths. An interaction between states close in energy is found which leads to energy shifts and to changes in the localization and/ or the orbital character of the interacting states. The conduction band structure is determined mainly by the interaction between SL and EW-localized states of equal parity. The valence band reveals a complex structure, dominated by the coupling between heavy and light hole states and the interaction between the states of different real space localization (SL or EW).