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Superconductivity and ferroelectricity of Pb(Zr,Ti) O3/YBa2Cu3O7 integrated films

โœ Scribed by L.X. Cao; Y. Xu; B.R. Zhao; T. Yang; Y. Zhu; D.F. Zhang; J.H. Zhao; Y.F. Fu; X.J. Li; B. Xu; Y.Z. Zhang; F. Wu; B. Yin; S.Q. Guo; J.W. Li; S.L. Jia; J.H. Jiang; L. Li


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
392 KB
Volume
266
Category
Article
ISSN
0921-4534

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Influences of embossing technology on Pb
โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct