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Super-junction LDMOST on a silicon-on-sapphire substrate

โœ Scribed by Nassif-Khalil, S.G.; Salama, C.A.T.


Book ID
114617122
Publisher
IEEE
Year
2003
Tongue
English
Weight
627 KB
Volume
50
Category
Article
ISSN
0018-9383

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Chemical vapor deposition of ฮฒ-SiC on si
โœ J.C. Pazik; G. Kelner; N. Bottka; J.A. Freitas Jr. ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 381 KB

Cubic silicon carbide (t-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050 ยฐC. The silicon layer is then carbonized while being heated to 1360 ยฐC.