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Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates

โœ Scribed by Dubrovskii, Vladimir G.; Nazarenko, Maxim V.; Chuang, Linus C.; Ko, Wai Son; Ng, Kar Wei; Chang-Hasnain, Connie

Book ID
111674244
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
564 KB
Volume
98
Category
Article
ISSN
0003-6951

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CdTe can be grown directly by molecular beam epitaxy on substrates such as GaAs or silicon, which exhibit very large lattice mismatches of 14.6% and 19% respectively. The occurrence of dual epitaxy, which has been previously reported for growth on (100)GaAs, has also been found recently for growth o