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Heteroepitaxy of erbium-doped silicon layers on sapphire substrates

✍ Scribed by V. G. Shengurov; D. A. Pavlov; S. P. Svetlov; V. Yu. Chalkov; P. A. Shilyaev; M. V. Stepikhova; L. V. Krasil’nikova; Yu. N. Drozdov; Z. F. Krasil’nik

Book ID
110140956
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
158 KB
Volume
47
Category
Article
ISSN
1063-7834

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CdTe can be grown directly by molecular beam epitaxy on substrates such as GaAs or silicon, which exhibit very large lattice mismatches of 14.6% and 19% respectively. The occurrence of dual epitaxy, which has been previously reported for growth on (100)GaAs, has also been found recently for growth o