Sulphide passivation of GaAs: study of surface band bending

✍ Scribed by V.L. Berkovits; V.N. Bessolov; T.V. L'vova; I.V. Makarenko; V.I. Safarov; B.V. Tsarenkov

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 322 KB
• Volume: 9
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(91)90146-m

✦ Synopsis

Optical and scanning tunnelling microscopy (STM) methods are used to characterize the electronic properties of sulphide-passivated GaAs surfaces. The optical technique makes it possible to follow the Fermi level movement on the surface in situ, the sample being immersed in sulphide solution. STM provides data on the thickness and electronic properties of the passivating coverage.