Sulphide passivation of GaAs: study of s
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V.L. Berkovits; V.N. Bessolov; T.V. L'vova; I.V. Makarenko; V.I. Safarov; B.V. T
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Article
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1991
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Elsevier Science
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English
β 322 KB
Optical and scanning tunnelling microscopy (STM) methods are used to characterize the electronic properties of sulphide-passivated GaAs surfaces. The optical technique makes it possible to follow the Fermi level movement on the surface in situ, the sample being immersed in sulphide solution. STM pro