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Passivation of defect states in Si-based and GaAs structures

✍ Scribed by E. Pinčík; H. Kobayashi; R. Brunner; M. Takahashi; Yueh-Ling Liu; L. Ortega; K. Imamura; M. Jergel; J. Rusnák

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
337 KB
Volume
254
Category
Article
ISSN
0169-4332

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✍ D. Yang; J.W. Garland; P.M. Raccah; C. Coluzza; P. Frankl; M. Capizzi; F. Chambe 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 258 KB

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat