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Electroreflectance and photoluminescence measurement of passivation by hydrogenation in GaAs/AlGaAs structures

✍ Scribed by D. Yang; J.W. Garland; P.M. Raccah; C. Coluzza; P. Frankl; M. Capizzi; F. Chambers; G. Devane

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 258 KB
Volume: 170
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(91)90177-g

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✦ Synopsis

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximate pinning levels and interace charges of the RTS.

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