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UV photoemission study of sulfide passivated GaAs surfaces

✍ Scribed by T. Tiedje; P.C. Wong; K.A.R. Mitchell; W. Eberhardt; Zugen Fu; D. Sondericker


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
339 KB
Volume
70
Category
Article
ISSN
0038-1098

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Atomic layer passivation of GaAs surface
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Loss of carriers by recombination at surfaces and interfaces of GaAs not only degrades the characteristics of minority-carrier injection devices but also reduces the device lifetime. This has impeded the development of GaAs technology. Therefore, various attempts have been made to find surface passi