Origin of HfO2/GaAs interface states and
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Weichao Wang; Ka Xiong; Geunsik Lee; Min Huang; Robert M. Wallace; Kyeongjae Cho
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Article
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2010
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Elsevier Science
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English
β 739 KB
a b s t r a c t First principles calculations of HfO 2 /GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO 2 and GaAs surfaces. We find that a model neutral interface (HfO 2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell)