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Sulfur passivation effect on HfO[sub 2]/GaAs interface: A first-principles study

✍ Scribed by Wang, Weichao; Gong, Cheng; Shan, Bin; Wallace, Robert M.; Cho, Kyeongjae


Book ID
120303145
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
655 KB
Volume
98
Category
Article
ISSN
0003-6951

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Origin of HfO2/GaAs interface states and
✍ Weichao Wang; Ka Xiong; Geunsik Lee; Min Huang; Robert M. Wallace; Kyeongjae Cho πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 739 KB

a b s t r a c t First principles calculations of HfO 2 /GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO 2 and GaAs surfaces. We find that a model neutral interface (HfO 2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell)