𝔖 Bobbio Scriptorium
✦   LIBER   ✦

First-Principles Study of the Effects of Interface Structure on the Schottky Barrier Height of the Al-GaAs(110) Interface

✍ Scribed by Needs, R. J; Charlesworth, J. P. A; Godby, R. W


Book ID
121012174
Publisher
EDP Sciences
Year
1994
Tongue
English
Weight
547 KB
Volume
25
Category
Article
ISSN
0295-5075

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Schottky barrier height dependence on th
✍ J Ivančo; J Almeida; C Coluzza; F Zwick; G Margaritondo πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 265 KB

This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interface depending on the silicon thickness which w