Schottky barrier height dependence on the silicon interlayer thickness of AuSi -GaAs contacts : chemistry of interface formation study
✍ Scribed by J Ivančo; J Almeida; C Coluzza; F Zwick; G Margaritondo
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 265 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0042-207X
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✦ Synopsis
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interface depending on the silicon thickness which was connected with observed variations in surface Fermi level positions. Further, the Au/Si/n-GaAs metal-semiconductor contacts were prepared on the studied structures. Measured changes in the Schottky barrier height for silicon thicknesses till approximately 1 nm are interpreted through the approach of the Schottky barrier height to Schottky limit due to decrease of the interface state densities on the Si/GaAs interface.