✦ LIBER ✦

Pressure dependence of Schottky barrier height at the Pt/GaAs interface

✍ Scribed by Shan, W.; Li, M. F.; Yu, P. Y.; Hansen, W. L.; Walukiewicz, W.

Book ID: 120814208
Publisher: American Institute of Physics
Year: 1988
Tongue: English
Weight: 484 KB
Volume: 53
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.100045

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interfacial atomic composition and Schot

Interfacial atomic composition and Schottky barrier heights at the Al/GaAs(001) interface

✍ Dandrea, R. G. 📂 Article 📅 1993 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 807 KB

Pressure dependences of silicide/silicon

Pressure dependences of silicide/silicon Schottky barrier heights

✍ J.H. Werner; H. Von Känel; G. Markewitz; R.T. Tung 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 407 KB

Tuning the Schottky barrier height at Mg

Tuning the Schottky barrier height at MgO/metal interface

✍ Jaouen, T.; Jezequel, G.; Delhaye, G.; Lepine, B.; Turban, P.; Schieffer, P. 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 760 KB

Hydrostatic pressure dependence of inter

Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes

✍ Savaş Sönmezoğlu; Fatih Bayansal; Güven Çankaya 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 248 KB

Pressure dependence of barrier heights o

Pressure dependence of barrier heights of schottky contacts on silicon

✍ Balasubramanyam, N. ;Kumar, Vikram 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 156 KB

Schottky barrier height dependence on th

Schottky barrier height dependence on the silicon interlayer thickness of AuSi -GaAs contacts : chemistry of interface formation study

✍ J Ivančo; J Almeida; C Coluzza; F Zwick; G Margaritondo 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 265 KB

This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interface depending on the silicon thickness which w