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Substrate-damage-free laser recrystallization of polycrystalline silicon

✍ Scribed by R. Buchner; W. Van Der Wel; K. Haberger; P. Seegebrecht


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
570 KB
Volume
4
Category
Article
ISSN
0921-5107

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Surface smoothing of laser crystallized polycrystalline silicon (poly-Si) films using gas cluster ion beam (GCIB) technology has been studied. It is found that both SF6-GCIB and O2-GCIB decrease the height of hillocks and reduce the surface roughness of the irradiated films. The mean surface roughne