Subquarter-micrometer gate-length p-channel and n-channel MOSFETs with extremely shallow source-drain junctions

✍ Scribed by Miyake, M.; Kobayashi, T.; Okazaki, Y.

• Book ID: 114535052
• Publisher: IEEE
• Year: 1989
• Tongue: English
• Weight: 662 KB
• Volume: 36
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.19941