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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length

✍ Scribed by Lee, Rinus T. P.; Liow, Tsung-Yang; Tan, Kian-Ming; Lim, Andy Eu-Jin; Wong, Hoong-Shing; Lim, Poh-Chong; Lai, Doreen M. Y.; Lo, Guo-Qiang; Tung, Chih-Hang; Samudra, Ganesh; Chi, Dong-Zhi; Yeo, Yee-Chia

Book ID: 125505877
Publisher: IEEE
Year: 2006
Weight: 803 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346915

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