✦ LIBER ✦

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling

✍ Scribed by Gurfinkel, M.; Suehle, J.S.; Bernstein, J.B.; Shapira, Yoram

No coin nor oath required. For personal study only.

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