Sub-quarter-micrometer gate-length p-channel MOSFETs with shallow boron counter-doped layer fabricated using channel preamorphization

✍ Scribed by Miyake, M.; Kobayashi, T.; Okazaki, Y.

• Book ID: 114536837
• Publisher: IEEE
• Year: 1990
• Tongue: English
• Weight: 842 KB
• Volume: 37
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.57163